Title :
Characterization of a photoresist with wavelength selected tone
Author :
Pederson, Lester A., Sr. ; Neureuther, Andrew R. ; Hinsberg, William D. ; MacDonald, S.A.
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
fDate :
8/1/1990 12:00:00 AM
Abstract :
The line edge profile simulation of a tone-switching resist system, obtained from the dissolution model of dual-sensitized, novolak-based resist in aqueous developer, is described. The model incorporates the actinic response of both a positive and a negative sensitizer in a two-pattern lithographic process that simultaneously exposes the same resist film. These response data are combined with dissolution rate measurements to establish a model for the resist and carry out SAMPLE simulation of resist line edge profiles for contact and projection printing. The model predictions are compared with SEM micrographs of exposed resist features
Keywords :
photoresists; SAMPLE simulation; SEM micrographs; UV photoresists; actinic response; aqueous developer; contact printing; dissolution model; dissolution rate measurements; dual-sensitized; exposed resist features; line edge profile simulation; model predictions; novolak-based resist; photoresist characterisation; photoresist with wavelength selected tone; projection printing; resist line edge profiles; response data; tone-switching resist system; two-pattern lithographic process; Conductors; Copper; Etching; Filtering; Predictive models; Printed circuits; Printing; Resists; Strontium; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
