Title :
Bulk defect induced low-frequency noise in n+-p silicon diodes
Author :
Hou, Fan-Chi ; Bosman, Gijs ; Simoen, Eddy ; Vanhellemont, Jan ; Claeys, Cor
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
The low-frequency 1/f-like noise of gated n+-p silicon diodes has been measured and analyzed in terms of trapping and detrapping of holes in defect centers located in the bulk section of the space charge region at 0.43 eV below the conduction band. Both the trap characteristics and their precise physical location are resolved from the noise measurements showing that the noise producing defect region moves closer to the metallurgical junction when forward bias is increased. The noise measurements independently confirm that thermal substrate pretreatments lower the defect density in the diodes fabricated in Czochralski (CZ) grown substrates. The defect centers are assumed to be associated with precipitated oxygen/dislocation complexes
Keywords :
1/f noise; crystal defects; electric noise measurement; elemental semiconductors; heat treatment; hole traps; semiconductor device measurement; semiconductor device noise; semiconductor diodes; silicon; space charge; time-domain analysis; Czochralski grown substrates; Si; bulk defect induced LF noise; conduction band; defect centers; defect density reduction; dislocation complexes; forward bias; gated n+-p diodes; hole detrapping; hole trapping; low-frequency noise; n+-p Si diodes; noise measurements; precipitated O complexes; space charge region; thermal substrate pretreatments; trap characteristics; Current measurement; Infrared spectra; Lattices; Low-frequency noise; Noise measurement; Semiconductor device noise; Semiconductor diodes; Silicon; Spectroscopy; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
