Title :
IGBT dynamics for clamped inductive switching
Author :
Trivedi, Malay ; Shenai, Krishna
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
Clamped inductive switching performance of insulated gate bipolar transistors (IGBTs) have been studied in detail with the aid of extensive measurements and numerical simulations. Internal dynamics of a latch-up free punch-through IGBT during clamped inductive switching is studied using two-dimensional (2-D) mixed device and circuit simulations incorporating the self-heating mechanism. Failure of IGBT during inductive load turn-off is shown to occur due to thermally assisted carrier multiplication at the reverse biased p-base n-drift region junction under the emitter contact
Keywords :
failure analysis; insulated gate bipolar transistors; power semiconductor switches; power transistors; semiconductor device models; semiconductor device reliability; 2D mixed device/circuit simulations; IGBT dynamics; IGBT failure; clamped inductive switching; emitter contact; insulated gate bipolar transistors; latch-up free punch-through device; reverse biased p-base n-drift region junction; self-heating mechanism; switching performance; thermally assisted carrier multiplication; Circuit optimization; Circuit simulation; Circuit testing; Insulated gate bipolar transistors; Manufacturing; Numerical simulation; Switches; Switching circuits; Thermal loading; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
