Title :
Characteristics of InAlAs/InGaAs high electron mobility transistors under 1.3-μm laser illumination
Author :
Takanashi, Yoshifumi ; Takahata, Kiyoto ; Muramoto, Yoshifumi
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
The current-voltage (I-V) characteristics of InAlAs/InGaAs high electron mobility transistors (HEMTs) under illumination are investigated. The change of the drain current caused by the illumination can be explained by using the photovoltaic effect so that the excess holes photo-generated in the InGaAs channel layer accumulate at the source-electrode region and cause an effective decrease in the potential barrier for electrons between the source and the channel. The basic equations describing this phenomenon are derived on the basis of the experimental results. In addition, our experimental results are shown to support the barrier-induced hole pile-up model in which holes generated by the impact ionization accumulate in the InAlAs barrier on the source side and cause the kink effect In InAlAs/InGaAs HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; hole mobility; impact ionisation; indium compounds; laser beam effects; photovoltaic effects; semiconductor device models; 1.3 micrometre; III-V semiconductors; InAlAs-InGaAs; barrier-induced hole pile-up model; current-voltage characteristics; excess holes; high electron mobility transistors; impact ionization; kink effect; laser illumination; photovoltaic effect; potential barrier; source-electrode region; Avalanche breakdown; Equations; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lighting; MODFETs; Substrates; Voltage;
Journal_Title :
Electron Device Letters, IEEE
