Title :
A new gradual hole injection dual-gate LIGBT
Author :
Lee, Byeong-Hoon ; Chun, Jung-Hoon ; Kim, Seong-Dong ; Byeon, Dae-Seok ; Lee, Won-Oh ; Han, Min-Koo ; Choi, Yearn-Ik
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A new shorted-anode lateral insulated gate bipolar transistor (SA-LIGBT), entitled gradual hole injection dual gate LIGBT (GHI-LIGBT), is proposed and fabricated. The new device employs a dual gate and p/sup +/ injector in order to initiate the hole injection gradually from the anode electrode into the drift region so that the negative differential resistance (NDR) regime may be eliminated. The experimental results show that the NDR regime, which may cause undesirable device characteristics, is completely eliminated in the GHI-LIGBT, and the forward voltage drop is reduced by 1 V at the current density of 200 A/cm/sup 2/ in comparison with the conventional SA-LIGBT.
Keywords :
charge injection; insulated gate bipolar transistors; negative resistance; GHI-LIGBT; SA-LIGBT; current density; forward voltage drop; gradual hole injection dual gate LIGBT; negative differential resistance; shorted anode lateral insulated gate bipolar transistor; Anodes; Bipolar transistors; Charge carrier processes; Current density; Electric breakdown; Electrodes; Geometry; Insulated gate bipolar transistors; Insulation; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
