A new gradual hole injection dual-gate LIGBT

Author

Lee, Byeong-Hoon ; Chun, Jung-Hoon ; Kim, Seong-Dong ; Byeon, Dae-Seok ; Lee, Won-Oh ; Han, Min-Koo ; Choi, Yearn-Ik

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

19

Issue

12

fYear

1998

Firstpage

490

Lastpage

492

Abstract

A new shorted-anode lateral insulated gate bipolar transistor (SA-LIGBT), entitled gradual hole injection dual gate LIGBT (GHI-LIGBT), is proposed and fabricated. The new device employs a dual gate and p/sup +/ injector in order to initiate the hole injection gradually from the anode electrode into the drift region so that the negative differential resistance (NDR) regime may be eliminated. The experimental results show that the NDR regime, which may cause undesirable device characteristics, is completely eliminated in the GHI-LIGBT, and the forward voltage drop is reduced by 1 V at the current density of 200 A/cm/sup 2/ in comparison with the conventional SA-LIGBT.

Keywords

charge injection; insulated gate bipolar transistors; negative resistance; GHI-LIGBT; SA-LIGBT; current density; forward voltage drop; gradual hole injection dual gate LIGBT; negative differential resistance; shorted anode lateral insulated gate bipolar transistor; Anodes; Bipolar transistors; Charge carrier processes; Current density; Electric breakdown; Electrodes; Geometry; Insulated gate bipolar transistors; Insulation; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.735756

Filename

735756