Title :
CB-BRT: a new base resistance-controlled thyristor employing a self-aligned corrugated p-base
Author :
Byeon, Dae-Seok ; Lee, Byeong-Hoon ; Kim, Doo-Young ; Han, Min-Koo ; Choi, Yearn-Ik
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
We propose and fabricate a new base resistance-controlled thyristor (BKT) employing a self-aligned corrugated p-base. The new device, entitled CB-BRT, suppresses the snap-back effectively and increases the maximum controllable current. Experimental results show that the snap-back of the CB-BRT is reduced significantly when compared with that of the conventional BRT. Also, the maximum controllable current of the CB-BRT increases as compared with the conventional BRT.
Keywords :
MOS-controlled thyristors; CB-BRT; MOS-gated thyristor; base resistance controlled thyristor; maximum controllable current; self-aligned corrugated p-base; snap-back; Doping; Fabrication; Fingers; Immune system; Insulated gate bipolar transistors; MOSFETs; Physics; Threshold voltage; Thyristors;
Journal_Title :
Electron Device Letters, IEEE
