DocumentCode
1450462
Title
Improving low-temperature APCVD SiO2 passivation by rapid thermal annealing for Si devices
Author
Sivoththaman, S. ; De Schepper, P. ; Laureys, W. ; Nijs, Johan F. ; Mertens, Robert P.
Author_Institution
IMEC, Leuven, Belgium
Volume
19
Issue
12
fYear
1998
Firstpage
505
Lastpage
507
Abstract
The quality of low-temperature (/spl ap/400/spl deg/C) atmospheric pressure chemical vapor deposited (APCVD) silicon dioxide (SiO/sub 2/) films has been improved by a short time rapid thermal annealing (RTA) step. The RTA step followed by a low temperature (400/spl deg/C) forming gas anneal (FGA) results in a well-passivated Si-SiO/sub 2/ interface, comparable to thermally grown conventional oxides. Efficient and stable surface passivation is obtained by this technique on virgin silicon as well as on photovoltaic devices with diffused (n/sup +/p) emitter surface while maintaining a very low thermal budget. Device parameters are improved by this APCVD/RTA/FGA passivation process.
Keywords
chemical vapour deposition; passivation; photovoltaic cells; rapid thermal annealing; semiconductor technology; silicon; silicon compounds; 400 C; Si; Si devices; Si-SiO/sub 2/; SiO/sub 2/ passivation; atmospheric pressure CVD; chemical vapor deposited SiO/sub 2/ films; diffused emitter surface; forming gas anneal; low-temperature APCVD; passivated Si-SiO/sub 2/ interface; photovoltaic devices; rapid thermal annealing; short time RTA step; stable surface passivation; Chemicals; Inductors; Passivation; Photovoltaic systems; Rapid thermal annealing; Semiconductor films; Solar power generation; Stability; Temperature; Wavelength measurement;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.735761
Filename
735761
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