DocumentCode
1450466
Title
Positive and Negative Magnetoresistance of a-C:Fe/Si Heterojunctions
Author
Wu, Lihua ; Zhang, Xiaozhong
Author_Institution
Dept. of Mater. Sci. & Eng., Tsinghua Univ., Beijing, China
Volume
45
Issue
10
fYear
2009
Firstpage
3488
Lastpage
3490
Abstract
The transition between positive and negative magnetoresistance (MR) is observed for Fe-doped amorphous carbon film/n-silicon (a-C:Fe/Si) heterojunctions. The sign of the MR changes as the applied bias voltage and temperature are changing. The MR transition voltage decreases from 0.2 to 0.06 V when temperature increases from 220 to 280 K. The transition from positive MR to negative MR is found to be accompanied by a decrease in slope of log(I) ~ log(V) plot. This phenomenon may be related to holes and electrons having different magnetic field responses.
Keywords
amorphous semiconductors; carbon; elemental semiconductors; iron; magnetoresistance; semiconductor doping; semiconductor heterojunctions; semiconductor thin films; silicon; C:Fe-Si; Fe-doped amorphous carbon film-n-silicon heterojunctions; applied bias voltage; magnetic field responses; magnetoresistance transition; negative magnetoresistance; positive magnetoresistance; semiconducting behavior; voltage 0.2 V to 0.06 V; Heterojunctions; negative MR; positive MR; transition;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2009.2023613
Filename
5257201
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