• DocumentCode
    1450469
  • Title

    Influence of line dimensions on the resistance of Cu interconnections

  • Author

    Fen Chen ; Gardner, D.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Delaware Univ., Newark, DE, USA
  • Volume
    19
  • Issue
    12
  • fYear
    1998
  • Firstpage
    508
  • Lastpage
    510
  • Abstract
    As dimensions reach the deep-submicrometer level on the order of the mean-free path of electrons, increases in the resistivity of a metal corresponding to reductions of wire dimensions is a concern. To understand the resistance dependence on the dimensions, resistance of Cu versus interconnection size was analyzed. The experimental values were in good agreement with Fuchs´ size-effect theory. The resistance of Cu increased nonlinearly as line width decreased. This enhancement was attributed to the increased surface and grain boundary scattering. Almost 50% of the electrons elastically scatter during transport in wires with widths below 0.5 μm. It will he important in the future to develop interconnections with smooth surfaces on all sides to maximize elastic scattering of electrons.
  • Keywords
    copper; electric resistance; electrical resistivity; electron collisions; grain boundaries; integrated circuit interconnections; surface scattering; 0.5 micron; Cu; Cu interconnections; elastic scattering; electron scattering; grain boundary scattering; line dimensions; metal resistivity; resistance dependence; size-effect theory; smooth surfaces; surface scattering; Conductivity; Conductors; Copper; Electric resistance; Electrons; Equations; Optical films; Reflection; Scattering; Wire;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.735762
  • Filename
    735762