DocumentCode
1450469
Title
Influence of line dimensions on the resistance of Cu interconnections
Author
Fen Chen ; Gardner, D.
Author_Institution
Dept. of Electr. & Comput. Eng., Delaware Univ., Newark, DE, USA
Volume
19
Issue
12
fYear
1998
Firstpage
508
Lastpage
510
Abstract
As dimensions reach the deep-submicrometer level on the order of the mean-free path of electrons, increases in the resistivity of a metal corresponding to reductions of wire dimensions is a concern. To understand the resistance dependence on the dimensions, resistance of Cu versus interconnection size was analyzed. The experimental values were in good agreement with Fuchs´ size-effect theory. The resistance of Cu increased nonlinearly as line width decreased. This enhancement was attributed to the increased surface and grain boundary scattering. Almost 50% of the electrons elastically scatter during transport in wires with widths below 0.5 μm. It will he important in the future to develop interconnections with smooth surfaces on all sides to maximize elastic scattering of electrons.
Keywords
copper; electric resistance; electrical resistivity; electron collisions; grain boundaries; integrated circuit interconnections; surface scattering; 0.5 micron; Cu; Cu interconnections; elastic scattering; electron scattering; grain boundary scattering; line dimensions; metal resistivity; resistance dependence; size-effect theory; smooth surfaces; surface scattering; Conductivity; Conductors; Copper; Electric resistance; Electrons; Equations; Optical films; Reflection; Scattering; Wire;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.735762
Filename
735762
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