DocumentCode :
1450469
Title :
Influence of line dimensions on the resistance of Cu interconnections
Author :
Fen Chen ; Gardner, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Delaware Univ., Newark, DE, USA
Volume :
19
Issue :
12
fYear :
1998
Firstpage :
508
Lastpage :
510
Abstract :
As dimensions reach the deep-submicrometer level on the order of the mean-free path of electrons, increases in the resistivity of a metal corresponding to reductions of wire dimensions is a concern. To understand the resistance dependence on the dimensions, resistance of Cu versus interconnection size was analyzed. The experimental values were in good agreement with Fuchs´ size-effect theory. The resistance of Cu increased nonlinearly as line width decreased. This enhancement was attributed to the increased surface and grain boundary scattering. Almost 50% of the electrons elastically scatter during transport in wires with widths below 0.5 μm. It will he important in the future to develop interconnections with smooth surfaces on all sides to maximize elastic scattering of electrons.
Keywords :
copper; electric resistance; electrical resistivity; electron collisions; grain boundaries; integrated circuit interconnections; surface scattering; 0.5 micron; Cu; Cu interconnections; elastic scattering; electron scattering; grain boundary scattering; line dimensions; metal resistivity; resistance dependence; size-effect theory; smooth surfaces; surface scattering; Conductivity; Conductors; Copper; Electric resistance; Electrons; Equations; Optical films; Reflection; Scattering; Wire;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.735762
Filename :
735762
Link To Document :
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