Sensitive asymmetrical MI effect in crossed anisotropy sputtered films

Author

Ueno, K. ; Hiramoto, H. ; Mohri, K. ; Uchiyama, T. ; Panina, L.V.

Author_Institution

Stanley Electr. Co. R&D, Yokohama, Japan

Volume

36

Issue

5

fYear

2000

fDate

9/1/2000 12:00:00 AM

Firstpage

3448

Lastpage

3450

Abstract

This paper reports experimental results to obtain a sensitive and asymmetrical MI effect in crossed anisotropy sputtered films magnetized with a DC-biased AC or pulse current. The sensitive and asymmetrical MI effect occurs, because the crossed anisotropy films induce spiral magnetic anisotropy. The crossed anisotropy film (Co₇₂Fe₈B₂₀) was made on a glass substrate using DC sputtering with two layers having 4.5 μm thickness each applying a DC field of 21 kA/m along with a designed anisotropy direction. A linear MI characteristic with a field detection sensitivity of 0.15%/(A/m) (12%/Oe) was obtained, which realizes a sensitive linear field sensor without any DC bias field

Keywords

amorphous magnetic materials; boron alloys; cobalt alloys; iron alloys; magnetic anisotropy; magnetic sensors; magnetic thin films; magnetisation; magnetoresistance; metallic glasses; sputtered coatings; Co₇₂Fe₈B₂₀; amorphous magnetic material; crossed anisotropy sputtered films; field detection sensitivity; glass substrate; linear characteristic; magnetization; metallic glass; sensitive asymmetrical magnetoimpedance effect; sensitive linear field sensor; spiral magnetic anisotropy; Anisotropic magnetoresistance; Glass; Iron; Magnetic anisotropy; Magnetic films; Perpendicular magnetic anisotropy; Sensor phenomena and characterization; Spirals; Sputtering; Substrates;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.908857

Filename

908857