Monolithic Integrated Silicon Polarization-Independent Tunable Filter Circuit With Germanium p-i-n Photodetector

Author

Li, Chao ; Zhang, Huijuan ; Chen, Shiyi ; Zhang, Jing ; Duan, Ning ; Yu, Mingbin ; Lo, Guo-Qiang

Author_Institution

Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore, Singapore

Volume

24

Issue

9

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

781

Lastpage

783

Abstract

We report the design, fabrication, and characterization of a monolithic integrated silicon polarization-independent optical tunable filter circuit with germanium p-i-n photodetector (PD). We demonstrate polarization transparent filter characteristics with an extinction ratio of ~22 dB, and a 3-dB bandwidth of 0.33 nm. The tuning range of the filter is ~11.5 nm. The measured fiber-to-PD responsivity of the photonic integrated circuit is ~0.10 A/W at a reverse bias of 5 V.

Keywords

elemental semiconductors; germanium; integrated optics; optical filters; optical tuning; p-i-n photodiodes; photodetectors; silicon; Ge; Si; extinction ratio; fiber-to-PD responsivity; monolithic integrated silicon polarization-independent tunable filter circuit; p-i-n photodetector; photonic integrated circuit; tuning range; voltage 5 V; Integrated optics; Optical device fabrication; Optical filters; Optical polarization; Optical resonators; Resonator filters; Silicon; Germanium; integrated optics; optical waveguide; silicon photonics;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2188385

Filename

6153346