Title :
Characteristics of TiO2 metal-semiconductor-metal photodetectors with O2 plasma treatment
Author :
Ji, L.W. ; Tang, I.T. ; Young, S.J. ; Meen, T.H. ; Tsai, J.K. ; Wu, T.C. ; Chang, S.J. ; Luo, Y.P. ; Lee, Kwan Chul ; Lin, J.C. ; Lee, B.Y.
Author_Institution :
Inst. of Electro-Opt. & Mater. Sci., Nat. Formosa Univ., Yunlin, Taiwan
Abstract :
In this study, titanium dioxide (TiO2) films were prepared on Corning glass substrates by radio frequency (RF) magnetron sputtering and treated without and with O2 plasma conditions, and then were used to fabricate metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs). The effects of the changes on TiO2 films were investigated by using field-emission scanning electron microscope (FE-SEM), photoluminescence (PL) system and four-point probe measurement. With a 360-nm illumination and 5 V applied bias, it was found that the responsivities of the fabricated TiO2 PDs without and with 2 minutes O2 plasma treatment were 36 and 153 A/W, respectively.
Keywords :
field emission electron microscopy; glass; photodetectors; photoluminescence; plasma materials processing; scanning electron microscopy; semiconductor thin films; sputter deposition; titanium compounds; ultraviolet detectors; Corning glass substrates; FE-SEM; MSM UV PDs; O2 plasma treatment; PL system; RF magnetron sputtering; TiO2; field-emission scanning electron microscope; four-point probe measurement; metal-semiconductor-metal ultraviolet photodetector characteristics; photoluminescence system; radio frequency magnetron sputtering; time 2 min; titanium dioxide films; voltage 5 V; wavelength 360 nm; Charge carrier processes; Educational institutions; Films; Plasma measurements; Plasmas; Surface morphology; Surface treatment; MSM; photodetectors; rf sputter; titanium dioxide;
Conference_Titel :
Information Science, Electronics and Electrical Engineering (ISEEE), 2014 International Conference on
Conference_Location :
Sapporo
Print_ISBN :
978-1-4799-3196-5
DOI :
10.1109/InfoSEEE.2014.6948069
