Characteristics of TiO2 metal-semiconductor-metal photodetectors with O2 plasma treatment

Author

Ji, L.W. ; Tang, I.T. ; Young, S.J. ; Meen, T.H. ; Tsai, J.K. ; Wu, T.C. ; Chang, S.J. ; Luo, Y.P. ; Lee, Kwan Chul ; Lin, J.C. ; Lee, B.Y.

Author_Institution

Inst. of Electro-Opt. & Mater. Sci., Nat. Formosa Univ., Yunlin, Taiwan

Volume

1

fYear

2014

fDate

26-28 April 2014

Firstpage

63

Lastpage

66

Abstract

In this study, titanium dioxide (TiO₂) films were prepared on Corning glass substrates by radio frequency (RF) magnetron sputtering and treated without and with O₂ plasma conditions, and then were used to fabricate metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs). The effects of the changes on TiO₂ films were investigated by using field-emission scanning electron microscope (FE-SEM), photoluminescence (PL) system and four-point probe measurement. With a 360-nm illumination and 5 V applied bias, it was found that the responsivities of the fabricated TiO₂ PDs without and with 2 minutes O₂ plasma treatment were 36 and 153 A/W, respectively.

Keywords

field emission electron microscopy; glass; photodetectors; photoluminescence; plasma materials processing; scanning electron microscopy; semiconductor thin films; sputter deposition; titanium compounds; ultraviolet detectors; Corning glass substrates; FE-SEM; MSM UV PDs; O₂ plasma treatment; PL system; RF magnetron sputtering; TiO₂; field-emission scanning electron microscope; four-point probe measurement; metal-semiconductor-metal ultraviolet photodetector characteristics; photoluminescence system; radio frequency magnetron sputtering; time 2 min; titanium dioxide films; voltage 5 V; wavelength 360 nm; Charge carrier processes; Educational institutions; Films; Plasma measurements; Plasmas; Surface morphology; Surface treatment; MSM; photodetectors; rf sputter; titanium dioxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Science, Electronics and Electrical Engineering (ISEEE), 2014 International Conference on

Conference_Location

Sapporo

Print_ISBN

978-1-4799-3196-5

Type

conf

DOI

10.1109/InfoSEEE.2014.6948069

Filename

6948069