• DocumentCode
    1450929
  • Title

    Impact of Process Variations on SRAM Single Event Upsets

  • Author

    Kauppila, A.V. ; Bhuva, Bharat L. ; Kauppila, J.S. ; Massengill, Lloyd W. ; Holman, W.T.

  • Author_Institution
    Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
  • Volume
    58
  • Issue
    3
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    834
  • Lastpage
    839
  • Abstract
    Process variations affect the single event (SE) hardness of SRAM cells. Monte-Carlo simulations show this effect and can be used to quantify the significance of process parameter shifts on SRAM SE upset probabilities.
  • Keywords
    Monte Carlo methods; SRAM chips; Monte-Carlo simulation; SRAM single event upset; process parameter shift; process variation; CMOS integrated circuits; MOSFETs; Random access memory; Single event upset; Threshold voltage; CMOS; SRAMs; critical charge; single event transients; single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2098419
  • Filename
    5713854
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1450929