AC analysis of amorphous silicon devices

Author

Pellegrini, Alessandro ; Colalongo, Luigi ; Valdinoci, Marina ; Rudan, Massimo

Author_Institution

Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy

Volume

15

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

1324

Lastpage

1331

Abstract

The transport model in semiconductors is examined in the case where the effect of distributed gap states is significant like, e.g., in thin-film transistors. A solution scheme is derived for the two additional continuity equations accounting for the trapped charge such that, without loss of generality, the efficiency of the traditional method implemented in the existing device-analysis codes is kept. The dynamic effect of the trapped charge is then examined in the ac operation of a realistic thin-film device, including the analysis of the interelectrode capacitances

Keywords

amorphous semiconductors; electron traps; elemental semiconductors; semiconductor device models; silicon; thin film transistors; AC analysis; Si; amorphous silicon device; distributed gap states; dynamic effect; interelectrode capacitance; semiconductor; thin-film transistor; transport model; trapped charge; Amorphous silicon; Capacitance; Charge carrier processes; Crystallization; Electron mobility; Electron traps; Equations; Substrates; Thin film devices; Thin film transistors;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.543765

Filename

543765