Sensitive acceleration sensor using amorphous wire SI element combined with CMOS IC multivibrator for environmental sensing

Author

Shen, L.P. ; Mohri, K. ; Uchiyama, T. ; Honkura, Y.

Author_Institution

Dept. of Electr. Eng., Nagoya Univ., Japan

Volume

36

Issue

5

fYear

2000

fDate

9/1/2000 12:00:00 AM

Firstpage

3667

Lastpage

3669

Abstract

A highly sensitive and quick response acceleration sensor has been constructed using the stress-impedance (SI) element of 20 μm diameter CoSiB amorphous wires combined with a CMOS IC multivibrator. The resolution of the acceleration sensor is 10^-3 Gal(=0.01 m/s ²) for repetitive vibration and 0.1 Gal for nonrepetitive motion. The high sensitivity is based on the ultrahigh values of the gauge factor of about 4000 in the CoSiB amorphous wire SI element. The power consumption is about 6 mW due to the pulse magnetization circuitry. Basic properties of the acceleration sensor and application to the sensing of road bridge seismovibration due to car passing are presented

Keywords

CMOS logic circuits; acceleration measurement; accelerometers; amorphous magnetic materials; boron alloys; cobalt alloys; magnetic sensors; magnetostrictive devices; metallic glasses; multivibrators; silicon alloys; vibration measurement; 20 micron; CMOS IC multivibrator; CoSiB; amorphous magnetic wires; amorphous wire stress-impedance element; cantilever beam; environmental sensing; magnetostrictive wire; pulse magnetization circuitry; quick response acceleration sensor; repetitive vibration; road bridge seismovibration; sensitive acceleration sensor; ultrahigh gauge factor values; Acceleration; Amorphous materials; CMOS integrated circuits; Energy consumption; Magnetic circuits; Magnetic sensors; Magnetization; Pulse circuits; Structural panels; Wire;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.908935

Filename

908935