Title :
Temperature-compensated linear BiCMOS transconductor
Author :
Chung, W.-S. ; Park, J.-M. ; Kim, K.
Author_Institution :
Dept. of Semicond. Eng., Chongju Univ., South Korea
fDate :
10/24/1996 12:00:00 AM
Abstract :
A BiCMOS circuit technique for realising temperature-compensated linear transconductors is described which uses two linear MOS transconductors and a bipolar translinear current gain cell. The theory of operation is presented and simulation results are used to verify theoretical predictions. The results show that the transconductance can be varied over three decades and its temperature coefficient is <200 ppm/°C
Keywords :
BiCMOS analogue integrated circuits; analogue processing circuits; compensation; integrated circuit design; bipolar translinear current gain cell; linear BiCMOS transconductor; linear MOS transconductors; temperature compensation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961371
