DocumentCode :
1451291
Title :
Alpha-particle-induced charge transfer between n+ regions in high-density trench DRAM with isolated p-well structures
Author :
Takeuchi, Kan ; Aoki, Masakazu ; Kume, Eiji ; Watanabe, Yasushi ; Kaga, Toru ; Itoh, Kiyoo
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
37
Issue :
8
fYear :
1990
fDate :
8/1/1990 12:00:00 AM
Firstpage :
1893
Lastpage :
1901
Abstract :
Alpha-particle-induced charge transfer (ACT) between n+ regions inherent in isolated p-well structures is described. The isolated p-well structures in Si ICs such as advanced trench DRAM cells can cause anomalous charge collection through the ACT. The collected charge is evaluated for advanced trench DRAM cells by circuit and device simulations. In addition, this mechanism is compared to charge transfer in devices with ordinary p-well structures by means of simulations of generalized model structures. It is concluded that ACT with isolated p-well structures may cause a significant problem with scaling, whereas ACT with ordinary p-well structures can be avoided by following a proposed scaling law
Keywords :
MOS integrated circuits; VLSI; alpha-particle effects; integrated circuit technology; integrated memory circuits; random-access storage; semiconductor device models; Si; advanced trench DRAM cells; alpha particle induced charge transfer; anomalous charge collection; charge transfer between n+ regions; device simulations; high-density trench DRAM; isolated p-well structures; model; scaling; Capacitance; Capacitors; Charge transfer; Circuit simulation; Gallium arsenide; ISO; Laboratories; MOSFETs; Random access memory; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.57141
Filename :
57141
Link To Document :
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