Title :
Selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) for low-cost, low-power-consumption optical hybrid modules
Author :
Kato, K. ; Yuda, M. ; Kozen, A. ; Muramoto, Yoshifumi ; Noguchi, K. ; Nakajima, O.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
10/24/1996 12:00:00 AM
Abstract :
The authors propose two novel designs of a waveguide photodiode for access networks; one is a planar waveguide conjunction with impurity diffusion to simplify the fabrication process and the other is an intentionally p-type doped photoabsorption layer to lower the operating voltage. Without degrading the efficiency, the fabricated device has a bandwidth of 500 MHz at 1 V and 250 MHz even at 0 V
Keywords :
optical communication equipment; optical fibre networks; optical planar waveguides; p-i-n photodiodes; 1 V; 250 MHz; 500 MHz; SIMPLE-WGPD; efficiency; fabrication process; impurity diffusion; low-power-consumption optical hybrid modules; operating voltage; p-type doped photoabsorption layer; planar waveguide conjunction; selective-area impurity-doped planar edge-coupled waveguide; waveguide photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961370
