DocumentCode
1451523
Title
Selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) for low-cost, low-power-consumption optical hybrid modules
Author
Kato, K. ; Yuda, M. ; Kozen, A. ; Muramoto, Yoshifumi ; Noguchi, K. ; Nakajima, O.
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
32
Issue
22
fYear
1996
fDate
10/24/1996 12:00:00 AM
Firstpage
2078
Lastpage
2079
Abstract
The authors propose two novel designs of a waveguide photodiode for access networks; one is a planar waveguide conjunction with impurity diffusion to simplify the fabrication process and the other is an intentionally p-type doped photoabsorption layer to lower the operating voltage. Without degrading the efficiency, the fabricated device has a bandwidth of 500 MHz at 1 V and 250 MHz even at 0 V
Keywords
optical communication equipment; optical fibre networks; optical planar waveguides; p-i-n photodiodes; 1 V; 250 MHz; 500 MHz; SIMPLE-WGPD; efficiency; fabrication process; impurity diffusion; low-power-consumption optical hybrid modules; operating voltage; p-type doped photoabsorption layer; planar waveguide conjunction; selective-area impurity-doped planar edge-coupled waveguide; waveguide photodiode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961370
Filename
543826
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