DocumentCode :
1451549
Title :
Epitaxial Growth and Magnetic Properties of Half-Metallic Fe 
O 
on Si(100) Using MgO Buff
Author :
Hassan, Sameh S A ; Xu, Yongbing ; Wu, Jing ; Thompson, Sarah M.
Author_Institution :
Depts. of Electron., Univ. of York, York, UK
Volume :
45
Issue :
10
fYear :
2009
Firstpage :
4357
Lastpage :
4359
Abstract :
The growth and magnetic properties of epitaxial magnetite Fe3O 4 on Si(100) using MgO buffer layer have been studied by reflection high-energy electron diffraction, X-ray photoelectron spectroscopy, and magneto-optical Kerr effect. The epitaxial Fe 3O 4 films were prepared by in situ post growth annealing of ultrathin epitaxial Fe films at 220degC in an oxygen partial pressure of 8 times 10-4 mbar. The epitaxial relationship was found to be Fe3 O4 (100)lang001rang//MgO(100)lang001rang//Si(100)lang001rang with the MgO film grown cube-on-cube orientation with the Si substrate. While the Fe unit cell rotates 45deg to match that of the MgO buffer layer, it rotates 45deg back upon oxidation. A low saturation field has been observed indicating low density of antiphase boundaries.
Keywords :
Kerr magneto-optical effect; X-ray photoelectron spectra; annealing; antiphase boundaries; buffer layers; epitaxial growth; iron compounds; magnetic epitaxial layers; molecular beam epitaxial growth; oxidation; reflection high energy electron diffraction; silicon; Fe3O4-Si; Si; Si(100) substrate; X-ray photoelectron spectroscopy; annealing; antiphase boundaries; buffer layer; cube-on-cube orientation; epitaxial growth; epitaxial magnetite film preparation; half-metallic material; magnetic properties; magneto-optical Kerr effect; molecular beam epitaxy; oxidation; reflection high-energy electron diffraction; temperature 220 C; Magnetic oxides; Si; magnetite; molecular beam epitaxy; spin injection; spintronics; ultra-thin films;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2009.2025600
Filename :
5257365
Link To Document :
