Title :
Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses
Author :
Negre, Laurent ; Roy, David ; Cacho, Florian ; Scheer, Patrick ; Jan, Sebastien ; Boret, Samuel ; Gloria, Daniel ; Ghibaudo, Gérard
Author_Institution :
Technol. Platform Sustaining/Electr. Characterization & Reliability, STMicroelectron., Crolles, France
fDate :
5/1/2012 12:00:00 AM
Abstract :
In the framework of MOSFET reliability for RF/AMS applications, a deep investigation of RF parameters degradation is performed. An innovative flow, composed of DC and RF stresses with DC and RF aging characterization, is presented. Degradation kinetics of main parameters are physically explained and modeled using PSP compact model to predict the behavior of stressed devices.
Keywords :
MOSFET; ageing; semiconductor device reliability; DC aging characterization; MOSFET; PSP compact model; RF aging characterization; RF parameters degradation; RF stresses; RF-AMS applications; aging prediction; analog-mixed-signal applications; degradation kinetics; innovative flow; modeling solution; reliability characterization; size 40 nm; stressed devices; Aging; Degradation; Hot carriers; Radio frequency; Reliability; Scattering parameters; Stress; Aging; MOSFET; PSP; compact model; hot carrier; load-pull; model; radio frequency; reliability;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2012.2185549
