DocumentCode :
1451956
Title :
Effect of Band-to-Band Tunneling on Junctionless Transistors
Author :
Gundapaneni, Suresh ; Bajaj, Mohit ; Pandey, Rajan K. ; Murali, Kota V R M ; Ganguly, Swaroop ; Kottantharayil, Anil
Author_Institution :
Indian Inst. of Technol. Bombay, Mumbai, India
Volume :
59
Issue :
4
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
1023
Lastpage :
1029
Abstract :
We evaluate the impact of band-to-band tunneling (BTBT) on the characteristics of n-channel junctionless transistors (JLTs). A JLT that has a heavily doped channel, which is fully depleted in the off state, results in a significant band overlap between the channel and drain regions. This overlap leads to a large BTBT of electrons from the channel to the drain in n-channel JLTs. This BTBT leads to a nonnegligible increase in the off-state leakage current, which needs to be understood and alleviated. In the case of n-channel JLTs, tunneling of electrons from the valence band of the channel to the conduction band of the drain leaves behind holes in the channel, which would raise the channel potential. This triggers a parasitic bipolar junction transistor formed by the source, channel, and drain regions induced in a JLT in the off state. Tunneling current is observed to be a strong function of the silicon body thickness and doping of a JLT. We present guidelines to optimize the device for high on-to-off current ratio. Finally, we compare the off-state leakage of bulk JLTs with that of silicon-on-insulator JLTs.
Keywords :
elemental semiconductors; leakage currents; semiconductor doping; silicon; tunnel transistors; OFF-state leakage current; ON-to-OFF current ratio; band overlap; band-to-band tunneling effect; channel potential; channel regions; conduction band; drain regions; electron tunneling; heavily doped channel; n-channel JLT; n-channel junctionless transistor; parasitic bipolar junction transistor; silicon body thickness; source regions; tunneling current; valence band; Doping; Junctions; Leakage current; Logic gates; Silicon; Transistors; Tunneling; Gated resistor; junctionless transistor (JLT); scaling; tunneling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2185800
Filename :
6155083
Link To Document :
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