Title :
Low temperature photo-oxidation of silicon using deep UV radiation
Author :
Zhang, Jun-Ying ; Boyd, I.W.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fDate :
10/24/1996 12:00:00 AM
Abstract :
Direct photo-oxidation of silicon at a temperature of 250°C has been investigated using vacuum ultraviolet radiation. The oxidation rate is more than three times greater than that obtained at 350°C using a low pressure mercury lamp. Ellipsometry, Fourier transform infrared spectroscopy, capacitance-voltage and current-voltage measurements indicate these to be high quality layers
Keywords :
Fourier transform spectra; elemental semiconductors; ellipsometry; infrared spectra; insulating thin films; oxidation; silicon; 172 nm; 250 C; FTIR spectroscopy; Fourier transform infrared spectroscopy; Si; Si-SiO2; Xe excimer lamp; capacitance-voltage measurements; current-voltage measurements; deep UV radiation; ellipsometry; high quality layers; low temperature photo-oxidation; oxidation rate; vacuum ultraviolet radiation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961377
