DocumentCode
1452147
Title
Carrier lifetime measurement by ramp recovery of p-i-n diodes
Author
Gamal, Salah H. ; Morel, H. ; Chante, J.P.
Author_Institution
INSA de Lyon, Villeurbanne, France
Volume
37
Issue
8
fYear
1990
fDate
8/1/1990 12:00:00 AM
Firstpage
1921
Lastpage
1924
Abstract
A method for measuring carrier lifetime in the base of power p-i-n diodes is introduced. The method is based on ramp recovery of power diodes. Neither the charge left at the end of the first phase of the recovery process, nor the based width are needed to determine lifetime. Moreover, information about the base width of relatively short-base diodes can be obtained
Keywords
carrier lifetime; p-i-n diodes; time measurement; base width measurement; carrier lifetime measurement; power p-i-n diodes; ramp recovery of power diodes; Charge carrier lifetime; Charge carrier processes; Electron mobility; Inductance; P-i-n diodes; PIN photodiodes; Power measurement; Rectifiers; Virtual reality; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.57146
Filename
57146
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