• DocumentCode
    1452255
  • Title

    Characteristics of AlGaAs/GaAs quantum-well delta-doped channel FET (QUADFET)

  • Author

    Hong, W.P. ; Zrenner, A. ; Kim, O.H. ; Harbison, J. ; Florez, L. ; DeRosa, F.

  • Author_Institution
    Bellcore, Red Bank, NJ, USA
  • Volume
    37
  • Issue
    8
  • fYear
    1990
  • fDate
    8/1/1990 12:00:00 AM
  • Firstpage
    1924
  • Lastpage
    1926
  • Abstract
    The transport properties of a two-dimensional electron gas in Al 0.3Ga0.7As/GaAs quantum-well delta-doped heterostructures are studied. Electron energy subbands in the quantum well were calculated by a self-consistent method. The FETs having a gate length of 1.3 μm showed a transconductance as high as 340 mS/mm. The FETs also showed a broad plateau of transconductance around its peak, which is not typical in MODFETs
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; 1.7 micron; Al0.3Ga0.7As-GaAs; MODFETs; QUADFET; broad plateau of transconductance; gate length; quantum-well delta-doped channel FET; quantum-well delta-doped heterostructures; semiconductors; transconductance; transport properties; two-dimensional electron gas; Atomic layer deposition; Doping; Electrons; Epitaxial layers; FETs; Gallium arsenide; Molecular beam epitaxial growth; Quantum wells; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.57147
  • Filename
    57147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1452255