Title :
Characteristics of AlGaAs/GaAs quantum-well delta-doped channel FET (QUADFET)
Author :
Hong, W.P. ; Zrenner, A. ; Kim, O.H. ; Harbison, J. ; Florez, L. ; DeRosa, F.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
8/1/1990 12:00:00 AM
Abstract :
The transport properties of a two-dimensional electron gas in Al 0.3Ga0.7As/GaAs quantum-well delta-doped heterostructures are studied. Electron energy subbands in the quantum well were calculated by a self-consistent method. The FETs having a gate length of 1.3 μm showed a transconductance as high as 340 mS/mm. The FETs also showed a broad plateau of transconductance around its peak, which is not typical in MODFETs
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; 1.7 micron; Al0.3Ga0.7As-GaAs; MODFETs; QUADFET; broad plateau of transconductance; gate length; quantum-well delta-doped channel FET; quantum-well delta-doped heterostructures; semiconductors; transconductance; transport properties; two-dimensional electron gas; Atomic layer deposition; Doping; Electrons; Epitaxial layers; FETs; Gallium arsenide; Molecular beam epitaxial growth; Quantum wells; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
