Advances in silicon-on-insulator optoelectronics

Author

Jalali, B. ; Yegnanarayanan, S. ; Yoon, T. ; Yoshimoto, T. ; Rendina, I. ; Coppinger, F.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

4

Issue

6

fYear

1998

Firstpage

938

Lastpage

947

Abstract

Recent developments in silicon based optoelectronics relevant to fiber optical communication are reviewed. Silicon-on-insulator photonic integrated circuits represent a powerful platform that is truly compatible with standard CMOS processing. Progress in epitaxial growth of silicon alloys has created the potential for silicon based devices with tailored optical response in the near infrared. The deep submicrometer CMOS process can produce gigabits-per-second low-noise lightwave electronics. These trends combined with economical incentives will ensure that silicon-based optoelectronics will be a player in future fiber optical networks and systems

Keywords

CMOS integrated circuits; epitaxial growth; integrated optoelectronics; optical communication equipment; optical fabrication; semiconductor growth; silicon-on-insulator; deep submicrometer CMOS process; fiber optical communication; gigabits-per-second low-noise lightwave electronics; review; silicon alloys; silicon based devices; silicon-based optoelectronics; silicon-on-insulator optoelectronics; silicon-on-insulator photonic integrated circuits; standard CMOS processing; tailored optical response; CMOS process; Epitaxial growth; Optical devices; Optical fiber communication; Optical fiber devices; Optical fiber networks; Photonic integrated circuits; Power generation economics; Silicon alloys; Silicon on insulator technology;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.736081

Filename

736081