DocumentCode
1452611
Title
Cost of Ownership/Yield Enhancement of High Volume Immersion Lithography Using Topcoat-Less Resists
Author
Khorram, Hamid R. ; Nakano, Katsushi ; Sagawa, Natsuko ; Fujiwara, Tomoharu ; Iriuchijima, Yasuhiro ; Sei, Toshi ; Takahiro, Tomioka ; Nakamura, Keichi ; Shiraishi, Kenichi ; Hayashi, Tsunehito
Author_Institution
Dept. of Adv. Technol., Nikon Precision Incorporation, Belmont, CA, USA
Volume
24
Issue
2
fYear
2011
fDate
5/1/2011 12:00:00 AM
Firstpage
173
Lastpage
181
Abstract
The complexity and extra cost associated with a resist topcoat (TC) layer has motivated the industry to transition to TC-less resist processes. By switching to TC-less resists, track suppliers are able to achieve higher throughput using less costly equipment, scanner suppliers can increase the scanning speed of their litho systems with minimized risk of defects, and end users eliminate a process step and gain increased output at a lower cost. These factors become increasingly critical as a result of the heightened processing complexities associated with double patterning lithography. In addition to reduction in process complexity benefits, a TC-less process must also satisfy the other critical performance criteria, and results for overlay, autofocus, and imaging will be discussed. To justify transition to a new process, there also should be demonstration of associated cost reduction or productivity improvements.
Keywords
immersion lithography; nanopatterning; resists; TC-less resist; cost reduction; double patterning lithography; high volume immersion lithography; ownership/yield enhancement; resist topcoat layer; scanner suppliers; topcoat-less resists; track suppliers; Adhesives; Complexity theory; Imaging; Lithography; Resists; Water pollution; Double patterning (DP) technology; dynamic advancing contact angle (D-ACA); dynamic receding contact angle (D-RCA); next generation lithography (NGL); particle per wafer pass (PWP); topcoat (TC);
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2011.2116128
Filename
5714755
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