DocumentCode :
1452668
Title :
Hazards of dichlorosilane exhaust deposits from the high-temperature oxide process as determined by FT-ICR mass spectrometry
Author :
Jarek, Russell L. ; Thornberg, Steven M.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
14
Issue :
1
fYear :
2001
fDate :
2/1/2001 12:00:00 AM
Firstpage :
20
Lastpage :
25
Abstract :
Gas samples from the exhaust system of tools employing dichlorosilane (DCS) in high temperature oxide (HTO) deposition that produced flammable solid deposits have been analyzed by Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometry. Exact mass determinations by the high-resolution FT-ICR allowed the identification of various polysiloxane species present in such an exhaust flow. Ion-molecule reactions of dichlorosilyl cation with water and DCS indicate the preferred reaction pathway is disiloxane formation through HCl loss, a precursor to the highly flammable polysiloxanes that were identified in the gaseous exhaust and in exhaust deposits. Minimization of these hazardous deposits is discussed with respect to water contamination, dilution factor and water scrubbing of the HTO exhaust
Keywords :
Fourier transform spectroscopy; high-temperature techniques; mass spectroscopic chemical analysis; oxidation; safety; water pollution; FT-ICR mass spectrometry; Fourier transform ion cyclotron resonance; dichlorosilane exhaust deposits; dilution factor; gaseous exhaust; high-temperature oxide process; ion-molecule reactions; polysiloxane species; preferred reaction pathway; water contamination; water scrubbing; Cyclotrons; Distributed control; Exhaust systems; Flammability; Fourier transforms; Hazards; Resonance; Solids; Temperature; Water pollution;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.909651
Filename :
909651
Link To Document :
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