Title :
Influence of Interface Traps on the Temperature Sensitivity of MOSFET Drain-Current Variations
Author :
Appaswamy, Aravind ; Chakraborty, Partha ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
5/1/2010 12:00:00 AM
Abstract :
The temperature sensitivity of drain-current variations in the subthreshold regime of MOSFET operation is analyzed through TCAD simulations and device measurements. Interface traps are determined to be the dominant factor in increasing the temperature sensitivity of drain-current differences in weak inversion. The variability caused by interface defects has significant implications on the reliability of MOSFET-based circuits intended for extreme-environment applications.
Keywords :
MOSFET circuits; circuit simulation; integrated circuit reliability; interface states; technology CAD (electronics); temperature; threshold logic; MOSFET-based circuit; TCAD simulation; device measurement; drain-current variation; extreme-environment application; interface defect; interface traps; reliability; subthreshold regime; temperature sensitivity; Hot carriers; MOSFETs; reliability; semiconductor-device radiation effects;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2041892
