Title :
The effect of varying barrier height on the operational characteristics of 1.3-μm strained-layer MQW lasers
Author :
Hazell, J.F. ; Simmons, J.G. ; Evans, J.D. ; Blaauw, C.
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
fDate :
12/1/1998 12:00:00 AM
Abstract :
This paper presents an empirical study of the effects that barrier layer composition has on the operational characteristics of 1.3-μm-wavelength InGaAsP-InP multiquantum-well (MQW) strained-layer ridge-waveguide lasers. A systematic empirical investigation of how this design choice affects practical device operation was undertaken by examining threshold current, efficiency, and modal gain as a function of temperature in five different laser structures. The results of these studies indicate that small barrier heights improve device performance, despite the loss of electronic confinement in the shallow conduction band quantum wells. Indeed, it appears that carrier uniformity in the MQW structure may be improved by carrier redistribution due to thermal or tunneling effects, which in turn enhances the operation of the low barrier height structures
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 micron; InGaAsP-InP; InGaAsP-InP MQW strained layer ridge waveguide laser; barrier height; carrier redistribution; conduction band; efficiency; electronic confinement; modal gain; multiquantum well; thermal effect; threshold current; tunneling; Carrier confinement; Chemical lasers; Energy states; Indium phosphide; Optical design; Performance loss; Quantum well devices; Quantum well lasers; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of