Title :
Double heterostructure GaAs/AlGaAs thin film diode lasers on glass substrates
Author :
Yablonovitch, E. ; Kapon, E. ; Gmitter, T.J. ; Yun, C.P. ; Bhat, R.
Author_Institution :
Bellcore Navesink Res. Center, Red Bank, NJ, USA
Abstract :
The epitaxial liftoff approach has been attracting increasing interest as an alternative to lattice-mismatched heteroepitaxy. A thin-film GaAs double heterostructure injection diode laser fabricated on a glass substrate by the epitaxial liftoff technique is reported. This presages the integration of the two major optical communication materials, III-V semiconductor crystals with SiO/sub 2/ glass.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor epitaxial layers; semiconductor junction lasers; GaAs-AlGaAs double heterostructure; III-V semiconductor; SiO/sub 2/ glass; epitaxial liftoff approach; lattice-mismatched heteroepitaxy; Crystalline materials; Diode lasers; Gallium arsenide; Glass; III-V semiconductor materials; Optical fiber communication; Optical materials; Semiconductor thin films; Substrates; Transistors;
Journal_Title :
Photonics Technology Letters, IEEE
