Title :
Dependence of relaxation oscillation frequency and damping K factor on the number of quantum wells in 1.55 mu m InGaAsP DFB lasers
Author :
Uomi, K. ; Aoki, M. ; Tsuchiya, T. ; Suzuki, M. ; Chinone, N.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
The dependence of the relaxation oscillation frequency and damping K factor on the number of quantum wells is systematically investigated in 1.55 mu m MQW-DFB lasers. The experimental and theoretical results indicate that the optimum number of quantum wells to increase the intrinsic modulation bandwidth limited by these two factors is about ten.<>
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; semiconductor quantum wells; 1.55 micron; III-V semiconductor; InGaAsP multiple quantum well distributed feedback lasers; damping K factor; intrinsic modulation bandwidth; relaxation oscillation frequency; theoretical results; Bandwidth; Damping; Frequency measurement; Laser theory; Optical fiber communication; Pulse measurements; Quantum mechanics; Quantum well devices; Quantum well lasers; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
