Title :
Monolithic GaInAs quad-p-i-n photodiodes for polarization-diversity optical receivers
Author :
Makiuchi, M. ; Hamaguchi, H. ; Wada, O. ; Mikawa, T.
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
GaInAs quad p-i-n photodiodes which monolithically integrate two sets of twin-p-i-n photodiodes have been fabricated for a polarization-diversity optical receiver designed for practical coherent lightwave transmission systems. Each p-i-n photodiode achieved a very small capacitance of 616-66 fF, a dark current of 6 pA-6 nA, and a high quantum efficiency of 86-88%. The cutoff frequency of the twin-p-i-n photodiodes exceeded 13 GHz. A common-mode rejection ratio (CMRR) of -30 dB was measured for the two sets up to 10 GHz. The optical/electrical crosstalk between the two sets of twin-p-i-n photodiodes was about -40 dB at 14 GHz.<>
Keywords :
III-V semiconductors; crosstalk; gallium arsenide; indium compounds; integrated optoelectronics; light polarisation; optical communication equipment; p-i-n diodes; photodetectors; photodiodes; receivers; 13 GHz; 6 pA to 6 nA; 61 to 66 fF; GaInAs; capacitance; common-mode rejection ratio; cutoff frequency; dark current; monolithic GaInAs quad p-i-n photodiodes; optical/electrical crosstalk; polarization-diversity optical receivers; practical coherent lightwave transmission systems; quantum efficiency; twin-p-i-n photodiodes; Bonding; Frequency; Lenses; Microoptics; Optical arrays; Optical crosstalk; Optical fiber polarization; Optical polarization; Optical receivers; Photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
