Title :
A 622 Mb/s high-sensitivity monolithic InGaAs-InP pin-FET receiver OEIC employing a cascode preamplifier
Author :
Uchida, N. ; Akahori, Y. ; Ikeda, M. ; Kohzen, A. ; Yoshida, J. ; Kokubun, T. ; Suto, K.
Author_Institution :
NTT Optelectron. Lab., Kanagawa, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
A long-wavelength monolithically integrated receiver optoelectronic integrated circuit (OEIC) comprising a low input-capacitance cascode transimpedance preamplifier and a p-i-n photodiode has been demonstrated. The OEIC is fabricated using metal-organic vapor phase epitaxy (MOVPE) grown epilayers and the beryllium ion-implantation technique. The receiver exhibits a sensitivity of -34.7 dBm at 622 Mb/s for BER-10/sup -9/. Using a cascode preamplifier reduces an input capacitance to about one-half of that of an inverter type, which results in the use of a larger feedback resistance of 16 k Omega . The combination of low input capacitance and large feedback resistance reduces the noise current of the receiver and results in high sensitivity.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; p-i-n diodes; photodiodes; preamplifiers; receivers; 16 kohm; 622 Mbit/s; Be; InGaAs-InP; MOVPE; cascode preamplifier; epilayers; feedback resistance; high-sensitivity; ion-implantation; large feedback resistance; low input-capacitance cascode transimpedance preamplifier; metal-organic vapor phase epitaxy; monolithically integrated receiver; noise current; optoelectronic integrated circuit; p-i-n photodiode; pin-FET receiver OEIC; semiconductors; sensitivity; Capacitance; Epitaxial growth; Epitaxial layers; Feedback; Inverters; Monolithic integrated circuits; Noise reduction; Optoelectronic devices; PIN photodiodes; Preamplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
