Title :
80-kW inductive pulsed power system with a photoconductive semiconductor switch
Author :
Funk, E.E. ; Chauchard, E.A. ; Rhee, M.J. ; Lee, Chi H.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fDate :
6/1/1991 12:00:00 AM
Abstract :
The performance of the GaAs photoconductive semiconductor switch (PCSS) has been optimized in the current-charged transmission-line configuration to produce a power gain of 45 with an output pulse of 80 kW. The fast falltime of the switch resistance produced by the specially tailored optical pulse that actives the PCSS is mainly responsible for the high power gain achieved. An effect similar to lock-on was found to limit the output voltage to approximately 2 kV.<>
Keywords :
III-V semiconductors; gallium arsenide; optical communication equipment; optical switches; photoconducting devices; semiconductor switches; 2 kV; 80 kW; GaAs; current-charged transmission-line configuration; fast falltime; inductive pulsed power system; photoconductive semiconductor switch; power gain; semiconductors; switch resistance; tailored optical pulse; Capacitors; Gallium arsenide; Optical pulses; Optical switches; Photoconducting devices; Power semiconductor switches; Power transmission lines; Pulse amplifiers; Pulse power systems; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
