DocumentCode :
1453083
Title :
High-Speed Low-Noise InAs/InAlGaAs/InP 1.55- 
Quantum-Dot Lasers
Author :
Gready, David ; Eisenstein, Gadi ; Gilfert, Christian ; Ivanov, Vitalii ; Reithmaier, Johann Peter
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Volume :
24
Issue :
10
fYear :
2012
fDate :
5/15/2012 12:00:00 AM
Firstpage :
809
Lastpage :
811
Abstract :
We present the static and dynamic properties of InAs quantum-dot (QD) lasers emitting near 1.55 μm. The used laser material comprises four QD layers and exhibits a high modal gain of about 40 cm-1. The 340-μ.m-long lasers show a room temperature threshold current of 38 mA and a maximum output power of 16 mW. The small signal modulation response is highly damped and carrier transport limited with a moderate 3-dB bandwidth of 5 GHz. This is accompanied by a flat relative intensity noise spectrum at a low level of -150 dBc/Hz. Neverthe- less, the laser exhibits record large signal modulation capabilities for a 1.5-μ.m QD laser: 15 Gb/s with a 4-dB on/off ratio.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum dot lasers; InAs-InAlGaAs-InP; QD layers; bandwidth 5 GHz; bit rate 15 Gbit/s; carrier transport; current 38 mA; laser material; low-noise quantum-dot lasers; modal gain; on-off ratio; power 16 mW; relative intensity noise spectrum; small signal modulation response; temperature 293 K to 298 K; threshold current; wavelength 1.55 mum; Gain; Laser modes; Laser noise; Laser theory; Modulation; Quantum dot lasers; Optoelectronic devices; quantum dots; semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2188506
Filename :
6155589
Link To Document :
