Title :
Low-Voltage CMOS Differential Logic Style With Supply Voltage Approaching Device Threshold
Author :
Kim, Jong-Woo ; Kim, Joo-Seong ; Kong, Bai-Sun
Author_Institution :
Sch. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea
fDate :
3/1/2012 12:00:00 AM
Abstract :
This brief describes a novel low-voltage CMOS differential logic operating with supply voltage approaching the MOS threshold voltage. The proposed logic style improves switching speed by boosting the gate-source voltage of transistors along timing-critical signal paths. The logic style also minimizes area overhead by allowing a single boosting circuit to be shared by complementary outputs. Test sets of logic gates were designed in a 0.18-μm CMOS process, whose comparison results indicated that the energy-delay product of the proposed logic style was improved by up to 86% compared with conventional logic styles at supply voltage ranging from 0.4 to 1.2 V. The experimental result for a 64-bit adder designed using the proposed logic style revealed an addition time of 4.8 ns at 0.5-V supply with 31 pJ at 100 MHz.
Keywords :
CMOS logic circuits; adders; integrated circuit design; logic design; logic gates; logic testing; low-power electronics; CMOS process; MOS threshold voltage; adder design; area overhead minimization; boosting circuit; device threshold; energy-delay product; frequency 100 MHz; logic gate test; low-voltage CMOS differential logic style; size 0.18 mum; supply voltage; switching speed; time 4.8 ns; timing-critical signal paths; transistor gate-source voltage; voltage 0.4 V to 1.2 V; Adders; Boosting; CMOS integrated circuits; Capacitance; Logic gates; Threshold voltage; Transistors; Adder; low power; low voltage; voltage boosting;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2012.2184380