Author :
Umbach, A. ; Van Waasen, S. ; Auer, U. ; Bach, H.-G. ; Bertenburg, R.M. ; Breuer, V. ; Ebert, W. ; Janssen, G. ; Mekonnen, G.G. ; Passenberg, W. ; Schlaak, W. ; Schramm, C. ; Seeger, A. ; Tegude, F.J. ; Unterbörsch, G.
Abstract :
A monolithically integrated photoreceiver is presented. Based on a new integration concept comprising a waveguide integrated photodiode and a travelling wave GaInAs/AlInAs-HEMT amplifier. A record 3 dB bandwidth of 27 GHz is measured and a clearly open eye is obtained for a 20 Gbit/s pseudo-random bit stream. This high speed performance was achieved with photolithographically defined 0.7 μm gate length HEMTs, regrown by MBE on semi-insulating GaInAsP waveguide layers
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical receivers; p-i-n photodiodes; photolithography; semiconductor epitaxial layers; semiconductor growth; travelling wave amplifiers; 0.7 micron; 1.55 micrometre; 20 Gbit/s; 27 GHz; AlInAs-GaInAs; III-V semiconductors; InP; MBE; clearly open eye; high speed performance; monolithically integrated photoreceiver; photolithographically defined devices; pin-HEMT photoreceiver; pseudo-random bit stream; travelling wave HEMT amplifier; waveguide integrated photodiode;
