Bistable operation of a two-section 1.3 μm InAs quantum dot laser-absorption saturation and the quantum confined Stark effect

Author

Huang, Xiaodong ; Stintz, A. ; Li, Hua ; Rice, Audra ; Liu, G.T. ; Lester, L.F. ; Cheng, Julian ; Malloy, K.J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

37

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

414

Lastpage

417

Abstract

Room temperature, continuous-wave bistability was observed in oxide-confined, two-section, 1.3 μm quantum-dot (QD) lasers with an integrated intracavity quantum-dot saturable absorber. The origin of the hysteresis and bistability were shown to be due to the nonlinear saturation of the QD absorption and the electroabsorption induced by the quantum confined Stark effect

Keywords

III-V semiconductors; electroabsorption; hysteresis; indium compounds; laser transitions; optical bistability; optical saturable absorption; quantum confined Stark effect; quantum well lasers; semiconductor quantum dots; 1.3 mum; InAs; QD absorption; absorption saturation; bistability; bistable operation; electroabsorption; hysteresis; integrated intracavity quantum-dot saturable absorber; nonlinear saturation; oxide-confined; quantum confined Stark effect; room temperature continuous-wave bistability; two-section 1.3 μm InAs quantum dot laser; Absorption; Gallium arsenide; Hysteresis; Optical bistability; Optical modulation; Potential well; Quantum dot lasers; Quantum dots; Stark effect; US Department of Transportation;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.910451

Filename

910451