Title :
Threshold voltage stabilization in radiation environments
Author :
Kerns, D.V., Jr. ; Barnaby, H.J. ; Kerns, S.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
CMOS circuit hardness to total ionizing dose is improved by a circuit technique that dynamically adjusts well and/or substrate voltages to maintain constant device threshold voltages. Threshold voltage excursions below a reference value activate an oscillator driving a charge pump. Stabilization is demonstrated experimentally. Techniques for optimizing the circuitry for various CMOS technology implementations are provided and supported with simulations
Keywords :
CMOS analogue integrated circuits; radiation hardening (electronics); CMOS circuit hardness; CMOS technology implementations; charge pump; circuit technique; constant device threshold voltages; radiation environments; substrate voltages; threshold voltage stabilization; total ionizing dose; CMOS technology; Charge pumps; Circuit simulation; Circuit testing; Design optimization; Feedback; MOSFETs; Threshold voltage; Voltage control; Voltage-controlled oscillators;
Journal_Title :
Nuclear Science, IEEE Transactions on
