Title :
Wideband semiconductor optical amplifier steady-state numerical model
Author :
Connelly, Michael J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Limerick Univ., Ireland
fDate :
3/1/2001 12:00:00 AM
Abstract :
A wideband steady-state model and efficient numerical algorithm for a bulk InP-InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier is described. The model is applicable over a wide range of operating regimes. The relationship between spontaneous emission and material gain is clarified. Simulations and comparisons with experiment are given which demonstrate the versatility of the model
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; semiconductor device models; semiconductor optical amplifiers; spontaneous emission; InP-InGaAsP; bulk InP-InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier; material gain; operating regimes; spontaneous emission; wideband semiconductor optical amplifier steady-state numerical model; Numerical models; Optical amplifiers; Optical devices; Optical materials; Optical refraction; Photonic band gap; Semiconductor optical amplifiers; Spontaneous emission; Steady-state; Stimulated emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
