Improvement of SOI MOSFET RF Performance by Implant Optimization

The characteristics of silicon on insulator MOSFETs are modified to enhance the RF performance by varying channel implants. Without adding new masks or fabrication steps to the standard CMOS process, this approach can be easily applied in standard foundry fabrication. The transconductance, output resistance, and breakdown voltage can be increased by eliminating channel and drain extension implants. As a result, the f_max of the modified n-MOSFET with a 150 nm gate length exceeds 120 GHz, showing a 20% improvement over the standard MOSFET for digital circuits on the same wafer.