Title :
Uniplanar broad-band push-pull FET amplifiers
Author :
Hsu, Pang-Cheng ; Nguyen, Cam ; Kintis, Mark
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
We report the development of completely uniplanar broadband balanced push-pull FET amplifiers using slot line and coplanar waveguide. The amplifiers employ broad-band uniplanar baluns to achieve the push-pull function over a wide bandwidth. One amplifier, designed in the unconditionally stable region, exhibits a gain of 3.5-5 dB over the frequency range of 5.4-10 GHz and an output 1-dB compression point of 19 dBm at 10 GHz. The other amplifier was designed in the potentially unstable range and achieves a high gain between 10-11 dB from 2 to 4 GHz and an output 1-dB compression point of 17 dBm at 4 GHz. These results show the feasibility of the push-pull FET amplifier configuration using uniplanar technology for microwave and millimeter-wave integrated circuits and systems
Keywords :
baluns; coplanar waveguides; differential amplifiers; field effect transistor circuits; microwave amplifiers; slot line components; waveguide components; wideband amplifiers; 10 to 11 dB; 2 to 4 GHz; 3.5 to 5 dB; 5.4 to 10 GHz; balun; coplanar waveguide; gain; microwave integrated circuit; millimeter-wave integrated circuit; output compression point; slot line; uniplanar broadband balanced push-pull FET amplifier; Bandwidth; Broadband amplifiers; Coplanar waveguides; Frequency; Gain; Impedance matching; Integrated circuit technology; Microwave FETs; Microwave amplifiers; Microwave technology;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
