Uniplanar broad-band push-pull FET amplifiers

Author

Hsu, Pang-Cheng ; Nguyen, Cam ; Kintis, Mark

Author_Institution

Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA

Volume

45

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2150

Lastpage

2152

Abstract

We report the development of completely uniplanar broadband balanced push-pull FET amplifiers using slot line and coplanar waveguide. The amplifiers employ broad-band uniplanar baluns to achieve the push-pull function over a wide bandwidth. One amplifier, designed in the unconditionally stable region, exhibits a gain of 3.5-5 dB over the frequency range of 5.4-10 GHz and an output 1-dB compression point of 19 dBm at 10 GHz. The other amplifier was designed in the potentially unstable range and achieves a high gain between 10-11 dB from 2 to 4 GHz and an output 1-dB compression point of 17 dBm at 4 GHz. These results show the feasibility of the push-pull FET amplifier configuration using uniplanar technology for microwave and millimeter-wave integrated circuits and systems

Keywords

baluns; coplanar waveguides; differential amplifiers; field effect transistor circuits; microwave amplifiers; slot line components; waveguide components; wideband amplifiers; 10 to 11 dB; 2 to 4 GHz; 3.5 to 5 dB; 5.4 to 10 GHz; balun; coplanar waveguide; gain; microwave integrated circuit; millimeter-wave integrated circuit; output compression point; slot line; uniplanar broadband balanced push-pull FET amplifier; Bandwidth; Broadband amplifiers; Coplanar waveguides; Frequency; Gain; Impedance matching; Integrated circuit technology; Microwave FETs; Microwave amplifiers; Microwave technology;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.643753

Filename

643753