Title :
Bias-free 1 Gbit/s data transmission using singlemode GaAs VCSELs at λ=835 nm
Author :
Schnitzer, P. ; Fiedler, U. ; Grabherr, M. ; Jung, C. ; Reiner, G. ; Zick, W. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
fDate :
11/7/1996 12:00:00 AM
Abstract :
Bias-free 1 Gbit/s pseudo-random data transmission using a laterally oxidised singlemode GaAs vertical-cavity surface-emitting laser is demonstrated and compared to biased modulation. A bit error-rate of 10-11 obtained -28 dBm received optical power makes these laser devices very attractive for optical interconnection
Keywords :
III-V semiconductors; data communication equipment; digital communication; gallium arsenide; laser beam applications; laser cavity resonators; laser modes; laser transitions; optical communication equipment; optical interconnections; semiconductor lasers; surface emitting lasers; 1 Gbit/s; 835 nm; BER; GaAs; bias-free data transmission; bit error-rate; laterally oxidised SEL; optical interconnection; pseudo-random data transmission; single-mode SEL; singlemode GaAs VCSEL; surface-emitting laser; vertical-cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961463
