DocumentCode :
1453634
Title :
Suppression of the CPW leakage in common millimeter-wave flip-chip structures
Author :
Lee, Gye-An ; Lee, Hai-Young
Author_Institution :
Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea
Volume :
8
Issue :
11
fYear :
1998
fDate :
11/1/1998 12:00:00 AM
Firstpage :
366
Lastpage :
368
Abstract :
Leakage phenomena in GaAs flip-chip structures, mounted on common GaAs and alumina main substrates, are studied using the spectral domain approach with the goal of reducing possible chip-to-chip crosstalk and transmission resonance. We have found that the TM0 parallel-plate mode in the main substrate is dominant for the coplanar waveguide flip-chip leakage, and that the leakage can be suppressed by properly selecting the gap height and the main substrate thickness in addition to the dielectric constant
Keywords :
III-V semiconductors; coplanar waveguides; crosstalk; flip-chip devices; gallium arsenide; millimetre wave integrated circuits; spectral-domain analysis; Al2O3; CPW leakage; GaAs; GaAs substrate; alumina substrate; chip-to-chip crosstalk; coplanar waveguide; dielectric constant; gap height; millimeter-wave flip-chip structure; parallel plate mode; spectral domain analysis; substrate thickness; transmission resonance; Conductors; Coplanar waveguides; Crosstalk; Dielectric constant; Dielectric substrates; Gallium arsenide; Integrated circuit technology; Millimeter wave technology; Packaging; Surface waves;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.736245
Filename :
736245
Link To Document :
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