Selectively etched undercut apertures in AlAsSb-based VCSELs

Author

Hall, E. ; Nakagawa, S. ; Almuneau, G. ; Kim, J.K. ; Coldren, L.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

13

Issue

2

fYear

2001

fDate

2/1/2001 12:00:00 AM

Firstpage

97

Lastpage

99

Abstract

Apertures were formed in single-growth, AsSb-based, long-wavelength (1.55 μm) vertical-cavity surface-emitting lasers by laterally etching the active region. The materials contrast between the AlAsSb-based mirrors and the AlInGaAs-based active region leads to a high selectivity for the etch, allowing long apertures to be formed with minimal etching of the mirrors. Lasers showing reduced threshold currents and increased efficiencies were demonstrated using these apertures.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; etching; laser beams; laser cavity resonators; laser mirrors; optical fabrication; semiconductor lasers; surface emitting lasers; 1.55 mum; AlAsSb; AlAsSb-based VCSELs; AlAsSb-based mirrors; AlInGaAs; AlInGaAs-based active region; AsSb; AsSb-based long-wavelength vertical-cavity surface-emitting lasers; active region; apertures; contrast; efficiencies; lateral etching; long apertures; minimal etching; mirrors; reduced threshold currents; selectively etched undercut apertures; selectivity; single-growth long-wavelength vertical-cavity surface-emitting lasers; Apertures; Etching; Fiber lasers; Indium phosphide; Mirrors; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.910499

Filename

910499