An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz

Author

Lai, R. ; Barsky, M. ; Huang, T. ; Sholley, M. ; Wang, H. ; Kok, Y.L. ; Streit, D.C. ; Block, T. ; Liu, P.H. ; Gaier, T. ; Samoska, L.

Author_Institution

Space & Technol. Group, TRW Inc., Redondo Beach, CA, USA

Volume

8

Issue

11

fYear

1998

fDate

11/1/1998 12:00:00 AM

Firstpage

393

Lastpage

395

Abstract

We present the highest frequency performance of any solid-state monolithic microwave integrated circuit (MMIC) amplifier. A 2-stage 80-nm gate length InGaAs/InAlAs/InP HEMT MMIC balanced amplifier has a measured on-wafer peak gain of 7.2 dB at 190 GHz and greater than 5 dB gain from 170 to 194 GHz. The circuit was fabricated using a pseudomorphic 20-nm In_0.65Ga_0.35As channel HEMT structure grown on a 3-in InP substrate by MBE. Based on the measured circuit results, the intrinsic exhibits an F_max greater than 400 GHz

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; differential amplifiers; field effect MMIC; indium compounds; 190 GHz; 7.2 dB; In_0.65Ga_0.35As; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP HEMT MMIC balanced amplifier; InP; InP HEMT MMIC LNA; InP substrate; MBE; gain; maximum oscillation frequency; pseudomorphic In_0.65Ga_0.35As channel HEMT; solid-state monolithic microwave integrated circuit amplifier; Frequency; Gain; HEMTs; Indium gallium arsenide; Indium phosphide; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Solid state circuits;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.736257

Filename

736257