Title :
An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz
Author :
Lai, R. ; Barsky, M. ; Huang, T. ; Sholley, M. ; Wang, H. ; Kok, Y.L. ; Streit, D.C. ; Block, T. ; Liu, P.H. ; Gaier, T. ; Samoska, L.
Author_Institution :
Space & Technol. Group, TRW Inc., Redondo Beach, CA, USA
fDate :
11/1/1998 12:00:00 AM
Abstract :
We present the highest frequency performance of any solid-state monolithic microwave integrated circuit (MMIC) amplifier. A 2-stage 80-nm gate length InGaAs/InAlAs/InP HEMT MMIC balanced amplifier has a measured on-wafer peak gain of 7.2 dB at 190 GHz and greater than 5 dB gain from 170 to 194 GHz. The circuit was fabricated using a pseudomorphic 20-nm In0.65Ga0.35As channel HEMT structure grown on a 3-in InP substrate by MBE. Based on the measured circuit results, the intrinsic exhibits an Fmax greater than 400 GHz
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; differential amplifiers; field effect MMIC; indium compounds; 190 GHz; 7.2 dB; In0.65Ga0.35As; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP HEMT MMIC balanced amplifier; InP; InP HEMT MMIC LNA; InP substrate; MBE; gain; maximum oscillation frequency; pseudomorphic In0.65Ga0.35As channel HEMT; solid-state monolithic microwave integrated circuit amplifier; Frequency; Gain; HEMTs; Indium gallium arsenide; Indium phosphide; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Solid state circuits;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
