• DocumentCode
    1453873
  • Title

    12 Gbit/s laser diode and optical modulator drivers with InP/InGaAs double HBTs

  • Author

    Bauknecht, R. ; Schneibel, H.P. ; Schmid, J. ; Melchior, H.

  • Author_Institution
    Swiss Federal Inst. of Technol., Zurich, Switzerland
  • Volume
    32
  • Issue
    23
  • fYear
    1996
  • fDate
    11/7/1996 12:00:00 AM
  • Firstpage
    2156
  • Lastpage
    2157
  • Abstract
    Electronic driver circuits for semiconductor lasers, optical modulators and optical amplifier gates used in fibre optical communication have been realised with InP/InGaAs double heterojunction bipolar transistors (HBTs) with fT=73 GHz and fmax=112 GHz. Achievements combine output voltages of 3.5 V and current swings of 140 mA across 25 Ω loads with rise and fall times of 60 ps. The driver ICs operate up to 12 Gbit/s
  • Keywords
    III-V semiconductors; bipolar digital integrated circuits; digital communication; driver circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; laser accessories; optical communication equipment; optical modulation; semiconductor lasers; 112 GHz; 12 Gbit/s; 140 mA; 3.5 V; 60 ps; 73 GHz; DHBT; HBT driver ICs; InP-InGaAs; double HBTs; electronic driver circuits; fibre optical communication; heterojunction bipolar transistors; laser diode drivers; optical amplifier gates; optical modulator drivers; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961427
  • Filename
    543896