DocumentCode :
1453873
Title :
12 Gbit/s laser diode and optical modulator drivers with InP/InGaAs double HBTs
Author :
Bauknecht, R. ; Schneibel, H.P. ; Schmid, J. ; Melchior, H.
Author_Institution :
Swiss Federal Inst. of Technol., Zurich, Switzerland
Volume :
32
Issue :
23
fYear :
1996
fDate :
11/7/1996 12:00:00 AM
Firstpage :
2156
Lastpage :
2157
Abstract :
Electronic driver circuits for semiconductor lasers, optical modulators and optical amplifier gates used in fibre optical communication have been realised with InP/InGaAs double heterojunction bipolar transistors (HBTs) with fT=73 GHz and fmax=112 GHz. Achievements combine output voltages of 3.5 V and current swings of 140 mA across 25 Ω loads with rise and fall times of 60 ps. The driver ICs operate up to 12 Gbit/s
Keywords :
III-V semiconductors; bipolar digital integrated circuits; digital communication; driver circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; laser accessories; optical communication equipment; optical modulation; semiconductor lasers; 112 GHz; 12 Gbit/s; 140 mA; 3.5 V; 60 ps; 73 GHz; DHBT; HBT driver ICs; InP-InGaAs; double HBTs; electronic driver circuits; fibre optical communication; heterojunction bipolar transistors; laser diode drivers; optical amplifier gates; optical modulator drivers; semiconductor lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19961427
Filename :
543896
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1453873
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