Lateral scaling effects on high-current transients in submicrometer bipolar transistors

Author

Hamasaki, Toshihiko ; Wada, Tetsunori ; Shigyo, Naoyuki ; Yoshimi, Makoto

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

35

Issue

10

fYear

1988

fDate

10/1/1988 12:00:00 AM

Firstpage

1620

Lastpage

1626

Abstract

High-current turn-on and turn-off transients for submicrometer bipolar transistors were studied in detail using two-dimensional numerical computer simulation. It is shown that, when the emitter line width is scaled down from 0.4 to 0.1 μm, only a little improvement is achieved in the turn-on transient, while the time delay is drastically reduced in the turn-off transient. This is due to the difference between the charge and discharge process for excess holes stored in the peripheral region of the base and the emitter. Emitter current oscillation was observed in the turn-off transient, which is attributed to the complicated change in the discharge path

Keywords

bipolar transistors; digital simulation; numerical methods; transients; 0.1 micron; charge process; discharge path; discharge process; emitter line width; excess holes; high-current transients; peripheral region; submicrometer bipolar transistors; time delay; turn-off transients; two-dimensional numerical computer simulation; Bipolar transistors; Circuit optimization; Computational modeling; Computer simulation; Conductivity; Delay effects; Geometry; Impurities; Ion implantation; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.7363

Filename

7363