Subthreshold slope in thin-film SOI MOSFETs

Author

Wouters, Dirk J. ; Colinge, Jean-Pierre ; Maes, Herman E.

Author_Institution

MEC, Leuven, Belgium

Volume

37

Issue

9

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

2022

Lastpage

2033

Abstract

The subthreshold conduction regime in thick- and thin-film SOI MOSFETs is studied. Using the depletion approximation, a one-dimensional analytical expression for the subthreshold slope is derived, and equivalence with a simple capacitive network is proven. The model accounts for the influence of the back interface properties on the subthreshold swing in the thin-film regime. The coupling between front and back surface potential and the influence of the backside conduction on the front interface characteristics are accounted for. The case of double gate control is studied in more detail. Experimental verification of the model with measured subthreshold slopes in thin-form MOSFET devices is given

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; thin film transistors; back interface properties; back surface potential; backside conduction; depletion approximation; double gate control; front interface characteristics; front surface potential; model; one-dimensional analytical expression; simple capacitive network; subthreshold conduction regime; subthreshold slope; thick-film SOI MOSFETs; thin-film SOI MOSFETs; Capacitance; Capacitors; Conductive films; FETs; Intelligent networks; MOSFETs; Photonic band gap; Subthreshold current; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.57165

Filename

57165