Light and Temperature Stability of Fully Transparent ZnO-Based Inverter Circuits

Author

Lajn, A. ; Diez, T. ; Schein, F. ; Frenzel, H. ; von Wenckstern, H. ; Grundmann, M.

Author_Institution

Fak. fur Phys. und Geowissenschaften, Univ. Leipzig, Leipzig, Germany

Volume

32

Issue

4

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

515

Lastpage

517

Abstract

The stability of the figures of merit of transparent inverter circuits at temperatures up to 150°C and under illumination by light in the visible spectral range is investigated. The inverter circuits consist of two transparent metal-semiconductor field-effect transistors. For temperatures up to 150°C, the inverters remain operational; the gate electrode degradation affects the voltage transfer characteristic (VTC) for temperatures above 90°C. Except for blue light, which slightly alters the VTC, visible light does not influence the device operation.

Keywords

III-V semiconductors; MESFET integrated circuits; field effect transistors; invertors; lighting; thermal stability; zinc compounds; ZnO; gate electrode degradation; illumination; inverter circuits; light stability; metal-semiconductor field-effect transistors; temperature stability; visible spectral range; voltage transfer characteristic; Electrodes; Inverters; Logic gates; MESFETs; Thermal stability; Zinc oxide; Inverters; light stability; metal–semiconductor field-effect transistor (MESFET) integrated circuits; thermal stability; transparent electronics;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2106193

Filename

5716659